| 摘要 |
PURPOSE:To prevent a resin from flowing out by getting over dam-shaped materials and to contrive the improvement of an integration degree between electronic components by a method wherein the dam-shaped materials are formed on the periphery of a semiconductor chip, grooves, by which the upper ends of the dam-shaped materials are formed into a square form, are provided in the lengthwise directions of the dam-shaped materials and the chip and the dam-shaped materials are coated with a coating resin. CONSTITUTION:In a semiconductor device with a semiconductor chip 2 mounted on an insulating substrate 1, when the chip 2, a bonding pad 3, a bonding wire 4 and the like are coated with a coating resin 5, such as an epoxy resin, a silicone resin or the like, for protecting the chip 2, the pad 3, the wire 4 and the like, insulating dam-shaped materials 6 are formed on the periphery of the chip 2 using a printing method or the like and at the same time, grooves 7 are respectively cut in the centers of the materials 6 in parallel to these materials 6 using a laser or the like and when the upper ends of the materials 6 are formed into a square form, an outflow of the resin 5 is prevented in the inner sides of the grooves 7 by the surface tensions of the edges of the upper ends. |
