| 摘要 |
PURPOSE:To realize quick response rate, excellent sensitivity and low price of element by providing electrodes to both surfaces of polycrystalline diamond films which has been grown so that it has adequate grain size owing to the gas phase synthesizing method and the grain boundary is shaped like a column. CONSTITUTION:A polycrystalline diamond film 2 having adequate grain size and high resistivity is grown on a substrate 1 by a gas phase synthesizing method and thereafter the substrate 1 is removed. In the growing stage, the polycrystalline is initially formed in the greater part in place of the column shape and various defects and uneven surface are left in the final stage. Therefore, both surfaces of the film 2 are polished. First the growing side is polished and thereafter the surface adhered on the substrate surface 1 is then polished. Next, electrodes 3, 4 are formed on both surfaces of the film 2 so that these are crossing orthogonally in the longitudinal direction of the column type polycrystalline. Thereby, a current flows from electrode to electrode without crossing the grain boundary of polycrystalline. Since the carrier mobility is high, high response rate and high sensitivity can be realized and moreover the price can be set lower than the element using a single crystalline diamond.
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