EXPOSURE METHOD ON PHOTORESIST

摘要

The exposure method for forming a fine pattern on the semiconductor substrate comprises the steps of forming a lower resist layer (2) on the substrate (1), exposing a specific portion (2a) of the lower resist (2) to form an upper resist layer (3) of the same kind as the lower (2) and exposing the upper resist layer (3) entirely by using a blank mask. The lower and upper resist layers (2,3) are formed by using a short spin time coating process to reduce the difference of the thickness of the resist by a topology step. The method improves the resolution of the exposure apparatus and the selectivity of the etching process.