发明名称 Pressure-contact type semiconductor device
摘要 Pressure-contact electrodes 3, 4 are mounted through insulating sheets 5, 6 on a metal substrate 2 having semiconductor elements such as MOSFETS mounted thereon. The electrodes are wire-bonded to the terminals of the semiconductor elements. The flexible insulating sheets are inserted between the metal substrate 2 and the electrode 3 and between the electrodes 3, 4 respectively. The insulating sheets are fixed onto the metal substrate and the electrodes through an adhesive 7. <IMAGE>
申请公布号 GB2249665(A) 申请公布日期 1992.05.13
申请号 GB19910021604 申请日期 1991.10.11
申请人 * FUJI ELECTRIC COMPANY LIMITED 发明人 SHOICHI * FURUHATA
分类号 H01L23/52;H01L23/48 主分类号 H01L23/52
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