METHOD OF MANUFACTURING FIELD EFFECT TRANSISTORS,申请号US19910730626-传众专利搜索

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发明名称	METHOD OF MANUFACTURING FIELD EFFECT TRANSISTORS
摘要
申请公布号	US5112766(A)	申请公布日期	1992.05.12
申请号	US19910730626	申请日期	1991.07.16
申请人	MITSUBISHI DENKI KABUSHIKI KAISHA	发明人	FUJII, TAKAYUKI;NAKATANI, MITSUNORI
分类号	H01L21/22;H01L21/338;H01L29/10;H01L29/417;H01L29/423;H01L29/812	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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