| 摘要 |
PURPOSE:To manufacture a light-emitting element having a p-n junction by forming a p-type ZnSe layer onto an n-type ZnSe substrate through an electrochemical deposition method in an aqueous solution containing Zn and Se having a specific temperature range and an acceptor element. CONSTITUTION:An aqueous solution 1 obtained by mixing Na2-NTA in 0.27 and ZnCl2 in 0.17 to weight 1 of the mixed liquid of Na2SO3.7H2):Se: H2O=11.3:0.24:60(wt.) at room temperature is admitted into a quartz beaker 2. Zinc Zn and a low-resistance n-type ZnSe single crystal are dipped in the aqueous solution while using zinc as an anode 3 and the low- resistance n-type ZnSe single crystal as a cathode 4, and a DC power 5 is connected to these electrodes. The low-resistance n-type ZnSe single crystal 4 is 3mmX3mmX1mm in dimensions. A Pt wire 6 is connected to the low-resistance n-type ZnSe single crystal 4 in such a manner that In is attached onto one surface of a ZnSe single crystal, an In electrode 16 as an ohmic connecting electrode is acquired and the Pt wire 6 is bonded with the In electrode 16 by Ag paste 17. Varnish 7 and a glass tube 8 protect the junction of the In electrode and the Pt wire from the aqueous solion. The temperature of the aqueous solution is kept at a value from room temperature to 70 deg.C, preferably 60 deg.C, and voltage of 0.2-0.5V and currents of 20-50mum are conducted between both electrodes for two hr. Accordingly, an Au electrode 10 is formed onto p-type ZnSe deposited on the n-type ZnSe substrate 4 through vacuum deposition in size of approximately 0.9mmphi. |
