| 摘要 |
PURPOSE:To enable a semiconductor light emitting element to emit visible rays of green to blue light short in wavelength by a method wherein a semiconductor crystal substrate is formed of ZnTe, a first, a second, and a third semiconductor crystal layer are formed of MgxZn1-xTe, and a figure of X in the composition of the second semiconductor crystal layer is specified. CONSTITUTION:In a double hetero-junction type semiconductor light emitting element, a semiconductor crystal substrate 1 is formed of ZnTe. A semiconductor laminated body 5 composed of a first, a second, and a third semiconductor crystal layer, 2, 3, and 4, is formed of MgxZn1-xTe (0<x<1). At this point, X in the composition MgxZn1-xTe of the second semiconductor crystal layer 3 serving as an active layer is set smaller than those of the first and the third semiconductor layer, 2 and 4, which serve as clad layers. |
