| 摘要 |
PURPOSE:To make the turning-off speed of a MOS FET transistor faster by respectively connecting the collector and the emitter of a bipolar transistor to the gate and the source of the MOS FET transistor and the base of the bipolar transistor to a 2nd output. CONSTITUTION:When a 1st output Q becomes positive from '0' at time t1, a MOS FET transistor Q1 is turned on and its drain current ID starts to flow and accumulates electric charges in the input capacity Ci to the transistor Q1. When the 2nd output, the inverse of Q, of the circuit 1 becomes positive from '0' thereafter at the time t2, the base current IB of a transistor Q2 flows through a base resistor R2 and capacitor C1. The charged voltage V1 generated by the electric charges accumulated in the input capacity Ci is quickly discharged as the collector current IC of the transistor Q2. |
