| 摘要 |
<p>A polysilicon resistor element and a semiconductor device using the same are disclosed. The polysilicon resistor element has a resistive polysilicon film (108) formed on a predetermined interlayer insulating film (107) of a semiconductor chip (101). The resistive polysilicon film (108) is covered by an insulating film (109) having holes and high melting point metal films (110) are formed in self-alignment to the holes. The high melting metal film (110) constitutes one of lead portions of the polysilicon resistor element. A diffusion of the high melting point metal film (110) due to heat treatment during fabrication, which causes an effective length of the resistor element, becomes negligible and reproducibility is improved. <IMAGE></p> |
