| 摘要 |
PURPOSE:To highly integrate a semiconductor storage device and reduce the junction capacity added to a bit line by forming four first diffusion areas with one diffusion layer and, at the same time, constituting four MOS transistors by forming the second diffusion areas so as to surround the four sides of the diffusion CONSTITUTION:On a substrate 1 n<+>-type drain areas 11 and 12 are formed at prescribed intervals as the fist diffusion areas and the areas 11 and 12 are connected to bit lines 4 passing over the areas through contact holes 3. Word line pairs 13 and 14 and 15 and 16 are extended along two facing sides of the drain area 11 and, at the same time, word line pairs 17 and 18 and 19 and 20 are extended along two facing sides of the drain area 12. A pair of gates 21b and 21d is formed from each upper-layer word lines 14 and 16 and four sides of the drain area 11 are surrounded by four gates 21a-21d. Then n<+>-type source areas 23-29 are radially formed as the second diffusion areas and connected to ground wiring 31 passing above the areas through contact holes 30. |
