| 摘要 |
A method for controlling the electrical characteristics of alloy diodes by subjecting the diode to a series of at least two carefully controlled reheat steps in order to result in predictable electrical characteristics for the diode. The first heat step involves heating the diode, after the PN junction has been formed and the device has been brought to room temperature, to a predetermined temperature of from 800 DEG C. to 1,100 DEG C. for from 15 seconds to 1 hour; thereafter and while the device is still at the predetermined temperature, the temperature is varied one or more times by a predetermined amount DELTA T. DELTA T is in the range from 1/4 DEG C. to 30 DEG C.
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