| 摘要 |
PURPOSE:To prevent dielectric strength between a source and drain and that between elements from lowering and to improve the reliability of this semiconductor storage device by providing the device with plural impurity areas connected to plural word line activating signal feeders, plural gate electrodes connected to decoders, plural impurity areas connected to plural word lines and plural drivers for activating the word lines. CONSTITUTION:The semiconductor storage device is provided with the word line activating signal feeders 100, 200 connected in the direction rectangular to the 1st and 2nd word lines 50 to 60, element separating areas formed along the direction rectangular to the word lines 50 to 60, the impurity areas 30 to 40 connected to the feeders 100, 200 adjacently to the element separating areas, the gate electrodes 80 to 91 connected to the decoders, the impurity areas 20 to 25 connected to the word lines, and the drivers 1 to 6 for activating the word lines. Consequently, dielectric strength between the source and the drain and that between the elements can be prevented from lowering, and the reliability and integration degree can be improved. |
