发明名称 |
MIS TYPE DIAMOND FIELD-EFFECT TRANSISTOR WITH A DIAMOND INSULATOR UNDERCOAT |
摘要 |
Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.
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申请公布号 |
US5107315(A) |
申请公布日期 |
1992.04.21 |
申请号 |
US19910668172 |
申请日期 |
1991.03.12 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
KUMAGAI, KAZUO;MIYATA, KOICHI;MIYAUCHI, SHIGEAKI;MATSUI, YUICHI;KOBASHI, KOJI |
分类号 |
H01L29/78;H01L21/04;H01L29/16;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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