| 摘要 |
A high-frequency SMD transistor having two emitter terminals is provided in which a semiconductor chip is secured on a lead frame and is contacted to electrical terminals on the lead frame in a manner to enable minimum semiconductor chip dimensions given high reliability. The two emitter terminals of the high-frequency SMD transistor are fashioned of one piece within the lead frame. A single electrical connection is present between the emitter contact of the semiconductor chip and the two one-piece emitter terminals.
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