| 摘要 |
<p>PURPOSE:To prevent particles from being applied to the surface of a substrate by a method wherein, when the substrate is bonded to a substrate bonding stand, the substrate is pressed toward the substrate bonding stand by using compressed air. CONSTITUTION:A substrate (a silicon wafer) 7 is piled up on the smooth surface of a reinforcement body (a substrate bonding stand) 2 in such a way that an epoxy-based sheetlike adhesive 6 is sandwiched; the reinforcement body 2 is housed in a recessed part 11 at a heater plate 10. Then, an electric current is applied to a heater 9; the adhesive 6 is heated to its hardening temperature via the reinforcement body 2; compressed air 15 is jetted to the surface of the substrate 7 from the rear surface of a pressurization utensil 16. The pressure force by which the compressed air 15 presses the substrate 7 is set to a magnitude, e.g. 8kg/cm<2>, which is required to bond the substrate 7; compressed air 15' supplied to the pressurization utensil 16 is set to a definite pressure (e.g. 100kg). At this time, the pressure force of the compressed air 15 is set by adjusting a faced gap delta between the substrate 7 and the pressurization utensil 16 within a range of, e.g. 3 to 10mum. In order to cool the adhesive 6, cooled compressed air 15b is jetted from the pressurization utensil 16 instead of the compressed air 15.</p> |
