| 摘要 |
Method of Producing CVD Silicon Oxynitride Film A silicon oxynitride film to be used as an passivation film in a semiconductor device is formed by the chemical vapour deposition of a mixture of a nitrogen containing organic silane gas such as (CH3)3SiNHSi(CH3)3, (CH3)3SiN(cC2H5)2, (CH3)3SiNHCOCH3, (CH3)2SiN(CH3)2 and CH2=CH-(CH3)2SiN(CH3)2 and the ozone gas. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature not higher than 450.degree.C. The mixture of the nitrogen containing organic silane gas the ozone gas is introduced into the reaction vessel and the reaction is carried out to form a silicon oxynitride film having the desired composition at a high deposition rate. Since the poisonous mono-silane gas is not utilized, the process can be carried out safely. Further, the reaction is performed at a low temperature not higher than 450.degree.C, the aluminum wiring conductors are not damaged during the chemical vapour deposition. The reaction vessel may be kept at the atmospheric pressure or a pressure higher than the atmospheric pressure. Further, the plasma CVD may be carried out.
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