| 摘要 |
<p>PURPOSE:To prevent the peeling and cracking of a silicon single crystal thin film and a transparent substrate by a thermal shock and to obtain the semiconductor single crystal-combined substrate having high quality and high production efficiency by laminating the silicon single crystal thin film via a stress relief layer on the transparent substrate. CONSTITUTION:The quartz substrate 1, the stress relief thin film 2 and the silicon single crystal thin film 3 are provided. A PSG (Phosphosiliocate Glass) film is adequate as the film 2. The substrate 1, the film 2 and the film 3 are laminated in this order and are respectively adhered. The means of the adhesion is by thermocompression bonding. Since the PSG film is interposed as the film 2 between the substrate and the thin film, the stress by a difference in the coefft. of temp. expansion is absorbed by the film 2 and the generation of the peeling and cracking in the film 3 is prevented. The semiconductor single crystal thin film-combined substrate having the stable performance is obtd. by interposing the impurity masked thin film and the thin film for stabilizing the boundary.</p> |
