| 摘要 |
<p>A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film (102) on the surface of a semiconductor substrate (101), forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole (103), and forming a wiring (104) made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A >/= C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween. The metal film is produced at a high deposition rate and a high throughput while ensuring good reliability and presenting superior film characteristics such as step coverage and electro migration.</p> |
