发明名称 READ-ONLY MEMORY
摘要 <p>PURPOSE:To speed up an operation time from the input of an address signal at the time of rising a word line selection signal (WL signal) to a sense amplifier output by providing a pull-down transistor between a data bus or a bit line and a low potential side power source. CONSTITUTION:A pull-down transistor N6 for connecting the data bus to a low potential side power source 2 is provided. Since a current always flows through a P channel transistor P1 by this pull-down transistor N6, at the time of rising the WL signal, the amount of the current flowing through the P1 is the sum of the amount of the current flowing through a memory cell N4 and the amount of the current flowing through the pull-down transistor N6. Therefore, the current flowing through the P1 increases by only the current flowing through a registor, and a current difference between the current flowing through the P1 and the half current (I REF) becomes larger, so the operation time of the sense amplifier becomes faster accordingly. Thus, an access time can be shortened.</p>
申请公布号 JPH04113599(A) 申请公布日期 1992.04.15
申请号 JP19900232952 申请日期 1990.09.03
申请人 SEIKO EPSON CORP 发明人 SUMI SHINJI
分类号 G11C17/18;G11C16/06 主分类号 G11C17/18
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