| 摘要 |
PURPOSE:To execute a high-concentration doping operation of antimony by a method wherein a P-type silicon epitaxial layer and an antimony-doped N-type silicon amorphous layer are grown on an N-type silicon epitaxial layer by using a molecular-beam epitaxial growth apparatus and a heat treatment is executed. CONSTITUTION:An N<-> type epitaxial layer 2 is grown on an N-type silicon substrate 1; a silicon dioxide film 3 is formed by a thermal oxidation operation; and a region in which a base is to be formed is opened. Then, silicon and boron are evaporated simultaneously at 650 deg.C by using a molecular-beam epitaxial growth (MBE) apparatus; and a P-type epitaxial layer 4 and a P-type epitaxial layer 5 are formed. Then, a silicon dioxide, film 6 and a silicon nitride film 7 are formed; silicon and antimony are evaporated simultaneously at room temperature by using the MBE apparatus; and amorphous silicon which has been doped at high concentration is deposited. Then, the amorphous silicon is heated at 650 deg.C and solid-grown; and it is changed to an N<+> type epitaxial layer 8. Thereby, a high-concentration doping operation of antimony can be executed.
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