| 摘要 |
A circuit structure integrated in a semiconductor substrate has at least one MOS-transistor. The surface of several elongated ditches (14) arranged in the surface of the substrate (11) is covered by a gate dielectric (15a) in an essentially conformed manner. Source and drain zones (13) are arranged on opposite sides of the ditches (14), so that the ditches (14) extend parallel to the surface of the substrate (11), perpendicularly to the junction line between source and drain zones (13). The ditches (24) are in particular manufactured by electron-beam lithography or by laser interference. By simultaneously etching fine storage electrode structures, the MOS-transistor can be advantageously used in highly integrated DRAMS. |
