发明名称 |
Method of producing capacitive pressure sensors. |
摘要 |
<p>A method of producing a capacitive pressure sensor comprising the steps of:-
forming at least one cavity in a sheet of semi-conductive material,
bonding the sheet of semiconductive material to a non-conductive substrate, whereby at least one totally enclosed cavity is produced with the portion of the semconductive sheet forming one side of the cavity in use serving as a diaphragm, and
removing part of said portion of the semiconductive sheet acting as a diaphragm from the side of the semiconductive sheet opposite to that which is bonded to the substrate so as to provide the diaphragm with a predetermined thickness appropriate to the required pressure range of the sensor, this step especially effected by lapping or grinding.</p> |
申请公布号 |
EP0478093(A2) |
申请公布日期 |
1992.04.01 |
申请号 |
EP19910202831 |
申请日期 |
1988.07.27 |
申请人 |
HAMILTON STANDARD CONTROLS, INC. |
发明人 |
CHEN, FRANK;ROGERS, TONY WILLIAM;BLACKABY, DAVID EDWARD |
分类号 |
G01L9/00 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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