发明名称 |
Process for selectively depositing a metal in vias and contacts by using a sacrificial layer |
摘要 |
A process for selectively depositing a contacting material (20) in trenches (18) for a via or contact which selectively eliminates potential metal contaminants (22) by removing a sacrificial layer (16) after the material (20) is selectively deposited. Initially, the trenches (18) are formed by selectively exposing the substrate (10) to an etchant (19). After metal material (20) is deposited into the formed trenches (18), a chemical etchant (24) is used to remove the sacrificial layer (16) and any formed contaminants (22).
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申请公布号 |
US5100501(A) |
申请公布日期 |
1992.03.31 |
申请号 |
US19890375092 |
申请日期 |
1989.06.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BLUMENTHAL, ROC;GALE, REBECCA J. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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