| 摘要 |
PURPOSE:To enable semiconductor devices to be reduced in their sizes and aggregate with a high density, by opening contact holes in a first interlayer insulation film and embedding therein metals of high melting point, etc., respectively, and by opening second contact holes in a second interlayer insulation film with which the first interlayer insulation film and the metals are covered, and further, by connecting Al wirings with a source and drain region via the second contact holes respectively. CONSTITUTION:On a silicon substrate 1, a field oxide film 2, a gate electrode 3, a gate electrode 4 and sidewall oxide films 6 are formed respectively. Also, in the surface region of the silicon substrate, a low concentration diffusion layer 5 and a high concentration diffusion layer 7 are formed respectively. Thereafter, the films, electrodes and layers are covered extensively with a first interlayer insulation film 8. Further, in the part of the first interlayer insulation film 8, which exists over the diffusion layers 5, 7, a first slender contact hole 12 is opened along the gate electrode 4. Then, a metallic film 9 of high melting point is formed in the first contact hole 12. Thereafter, extensively, a second interlayer insulation film 10 is formed, and a second contact hole 13 is opened in the film 10, so that a part of the metallic film 9 of high melting point embedded in the first contact hole 12 is exposed. Then, an Al wiring 11, which is in contact with the metallic film 9 of high melting point via the second contact hole 13, is formed. |
