发明名称 |
Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby. |
摘要 |
<p>For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode is formed on the first and second oxide superconducting regions. The superconducting device thus formed can functions as a super-FET. <IMAGE></p> |
申请公布号 |
EP0477103(A2) |
申请公布日期 |
1992.03.25 |
申请号 |
EP19910402500 |
申请日期 |
1991.09.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
NAKAMURA, TAKAO, CABINET BALLOT-SCHMIT;INADA, HIROSHI, CABINET BALLOT-SCHMIT;IIYAMA, MICHITOMO, CABINET BALLOT-SCHMIT |
分类号 |
H01L39/14 |
主分类号 |
H01L39/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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