| 摘要 |
PURPOSE:To miniaturize an element by insulating a gate electrode from a first diffused region to become a source without overlapping on the diffused region by an oxide film formed on a gate electrode in a groove. CONSTITUTION:After an oxide film 11 is formed on a semiconductor substrate X, a groove 100 is formed, a gate oxide film 10 is formed on the surface, and a conductive film la is formed on the films 10 and 11. The film la is etched back to form a gate electrode l. A P<+> type diffused layer 4 is formed, and an n<+> type diffused region 6 to become a source region and a p-type diffused region 5 to become a channel region 9 are formed. Then, an oxide film 3 to become a second oxide film is formed on the entire surface. The film 3 is etched back, the film 3 on the regions 6, 5 is removed, and the film 3 remains only in the groove 100. Thus, the electrode l and the region 6 are insulated by the film 3 formed on the electrode l. Accordingly, the film 3 is not overlapped on the region 6, and an element can be miniaturized in comparison with prior art. |
