| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a three-dimensional stacked nonvolatile semiconductor memory for improving program disturbance of a BiCS memory. <P>SOLUTION: A three-dimensional stacked nonvolatile semiconductor memory comprises a memory cell array comprised of first and second blocks BK<i>, BK<i+1>. The first block has a first cell unit including a memory cell to be programmed, and a second cell unit not including the memory cell to be programmed, and executes programming by applying a program potential Vpgm or a transfer potential Vpass to word lines WL<0>, WL<1>, WL<2>, WL<3> in the first block after the initial potential of channels in the memory cell in the first and second cell units is set to a plus potential. In programming, the program potential Vpgm and transfer potential Vpass are not applied to the word lines WL<0>, WL<1>, WL<2>, WL<3> in the second block. <P>COPYRIGHT: (C)2010,JPO&INPIT |
