| 摘要 |
PURPOSE:To reduce the dark current, by providing the coating film specifying the specific resistivity and energy level under the compound film and the coating film specifying specific resistivity on it, when transparent conductive film is placed on the substrate and photo conductive element is constituted by forming the coating film of CdIn2Te4 compound on it. CONSTITUTION:The transparent conductive film 12 is placed on the glass substrate 11, and the film 13 in which the enrgy from Fermi level to the upper end of valence electron band is 0.6 eV or more and the specific resistivity is 10<5>to 10<18> ohm cm, such as Zn and Se, is vacuum-evaporated. Next, on it, CdTe and In2Te4 are evaporrated from separate crucible and coated, forming the coating film 14 of CdIn2Te4 at the second layer with heat treatment. After that, on it, the film 15 of the third layer of (ZnTe)1-x (In2Te3)x, (0<=x<=0.2) is coated, constituting high resistive film of 10<10>to 10<13> ohm cm. Next, the electrode 16 is attached on the film 15 and the electrode 17 is at the end of the film 12 respectively. Thus, sufficient optical signal current can be obtained. |
