发明名称 |
Method for production of bonded wafer. |
摘要 |
<p>A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film. <IMAGE></p> |
申请公布号 |
EP0476897(A2) |
申请公布日期 |
1992.03.25 |
申请号 |
EP19910308186 |
申请日期 |
1991.09.06 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY, LIMITED |
发明人 |
ITO, TATSUO;NAKAZATO, YASUAKI |
分类号 |
H01L21/02;H01L21/20;H01L21/316;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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