发明名称 METHOD OF FORMING AN ALIGNMENT MARK
摘要 <p>A method of forming an alignment mark for a semi-conductor wafer including the steps of forming an insulating film or a polycrystalline silicon film on a scribe line region of said semiconductor wafer, and providing a plurality of parallel grooves in the insulating film or the polycrystalline silicon film to form a plane reflection type diffraction grating.</p>
申请公布号 EP0230648(B1) 申请公布日期 1992.03.25
申请号 EP19860117956 申请日期 1986.12.23
申请人 NEC CORPORATION 发明人 HONTO, NOBUO C/O NEC CORPORATION
分类号 H01L21/68;G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L23/544 主分类号 H01L21/68
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