发明名称 |
METHOD OF MAKING A PASSIVATED SEMICONDUCTOR DEVICE |
摘要 |
METHOD OF MAKING A PASSIVATED SEMICONDUCTOR DEVICE A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient. |
申请公布号 |
CA1297834(C) |
申请公布日期 |
1992.03.24 |
申请号 |
CA19860525934 |
申请日期 |
1986.12.19 |
申请人 |
RCA CORPORATION |
发明人 |
KAGANOWICZ, GRZEGORZ;ENSTROM, RONALD E.;ROBINSON, JOHN W. |
分类号 |
H01L21/02;H01L21/306;H01L21/314;H01L21/318;H01L31/0216 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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