| 摘要 |
PURPOSE:To stabilize a reactive ion etching operation and to enhance the reproducibility of a dry-type developing operation by a method wherein a gas, in specific %, which is hardly changed to negative ions is added to oxygen atoms or molecules which are easily changed to negative ions and a plasma is generated. CONSTITUTION:A gas, containing oxygen, in which 5 to 60% of a gas which is hardly changed to negative ions has been added to oxygen gas is supplied to a plasma generation chamber 10; a resist is etched. One or two or more kinds out of a rate gas such as helium, argon, xenon, neon, krypton or the like, and hydrogen and nitrogen are used as gases which are hardly changed to negative ions. Gases for plasma generation use are supplied, via respective mass-flow controllers 17A and 17B, to the process chamber 10 from an oxygen gas bomb 16A and a bomb 16B of the gas which is hardly changed to negative ions. RF electric power is applied to an electrode 11; an RF electric discharge is generated between the electrode and the wall 18 of the process chamber 10 as an electrode on one side; a plasma is generated; the resist with which a wafer held on the electrode 11 has been coated is etched, and a dry-type developing operation is executed. |
