| 摘要 |
PURPOSE:To reduce contact resistance of a p-type SiC with an electrode and to make ohmic properties in the electrode uniform by laminating an Ni film, a Ti film in an arbitrary sequence on the SiC, laminating an Al film thereon, and then heat-treating it. CONSTITUTION:An n-type SiC layer 2, a p-type SiC layer 3 are sequentially epitaxially grown on one main surface la of an n-type SiC substrate 1. Then, an Ni film 4, a Ti film 5, an Al film 6 are sequentially deposited on the layer 3, and a p-type side electrode 7 is formed. Further, an Ni film 8, an Au film 9 are sequentially deposited on the other main surface 1b of the substrate 1, and an n-type electrode 10 is formed. Thereafter, this laminate is heat-treated in an inert gas to obtain ohmic properties at the electrodes 7, 10 to contact SiC. Thus, a light emitting diode having excellent electric characteristics is obtained. |
