发明名称 PHOTOVOLTAIC DEVICE
摘要 PURPOSE:To enhance the output characteristic of a photovoltaic device by a method wherein an amorphous silicon layer which contains fine crystals and oxygen is provided as an optically active layer. CONSTITUTION:A transparent electrode 2 composed of SnO2, a p-type layer 3 composed of boron(B)-doped amorphous silicon carbide, an i-type layer 4 as an optically active layer composed of undoped silicon, an n-type layer 5 composed of phosphorus(P)-doped amorphous silicon and a rear electrode 6 composed of Ag are laminated and formed in this order on a glass substrate 1. The i-type layer 4 is composed of an amorphous silicon film which contains fine crystals and oxygen. The amount of oxygen in the i-type layer 4 affects a conversion efficiency. When the amount of oxygen is at 1 to 10%, the conversion efficiency is enhanced. In addition, the volume ratio of amorphous silicon to the fine crystals in the i-type layer 4 affects a conversion efficiency. The conversion efficiency becomes maximum when the volume ratio of the fine crystals is at 30%. Thereby, output characteristics such as a discharge voltage, the conversion efficiency and the like are enhanced.
申请公布号 JPH0482276(A) 申请公布日期 1992.03.16
申请号 JP19900196582 申请日期 1990.07.24
申请人 SANYO ELECTRIC CO LTD 发明人 NOGUCHI SHIGERU;IWATA HIROSHI;SANO KEIICHI
分类号 H01L31/04 主分类号 H01L31/04
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