FORMATION OF SEMICONDUCTOR THIN FILM AND APPARATUS THEREFOR

摘要

PURPOSE:To easily and selectively form a semiconductor thin film using a mask on a semiconductor substrate by introducing electron cyclotron resonance plasma into a semiconductor thin film forming chamber where a semiconductor substrate is provided and generating plasma of semiconductor raw material gas with the same plasma within the same chamber. CONSTITUTION:A carrier gas source is connected to a gas supply pipe 6 connected to a gas supply port 4 of a hollow vessel 2 forming the electron cyclotron resonance plasma generation chamber 1 and a carrier gas C such as hydrogen is supplied to the electron resonance plasma generation chamber 1. A semiconductor raw material gas source is supplied to a gas supply pipe 26 connected to a gas supply port 25 of a hollow vessel 22 forming the semiconductor thin film forming chamber 21 and a semiconductor raw material gas G such as silane gas is supplied to the semiconductor thin film forming chamber 21. The electron cyclotron resonance plasma P1 of carrier gas is generated in the electron cyclotron resonance plasma generating chamber 1 by adequately adjusting intensity of magnetic field in the electron cyclotron resonance plasma generating chamber 1.