Precision MOSFET resistance circuit - uses pair of drain- and source-coupledMOSFET(s) and associated source followers

摘要

The resistance circuit uses a pair of drain- and source-coupled n-type MOSFETs (M1, M2) acting as a resistance element between 2 nodes (11, 12) across which a potential difference exists. A pair of p-type MOSFETs source followers, each containing 2 transistors (M5, M3, M6, M4) are used to control the resistance value via the applied bias voltage. A second pair of n-type MOSFETs source followers, each with 2 transistors (M7, M9, M8, M10) eliminate non-linearities resulting from the substrate effect. A second similar impedance element may be connected in series with the first. ADVANTAGE - High precision and linearity.