发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To alleviate an unstable operation of a sense amplifier due to a contact resistance by forming an insulating film to be exposed at an adjacent element region to one region of a wiring to be superposed with an element region with a common contact hole, and providing an electrode for electrically connecting a wiring to the element region through the contact hole. CONSTITUTION:A first contact 37, a second contact 38 having a mark 'x' are opened as one canon contact so as to expose a drain region adjacent to part of a bit line to be superposed with the drain region. A first electrode 32, a second electrode 33 are provided through the common contact. The exposed region of the line is brought into contact with a diffused region via the electrodes 32, 33. A third contact hole 39, a fourth contact hole 40 are provided. Accordingly, an N-type polysilicon 29 of a lower layer can be brought into ohmic contact with a P<+> type diffused region without direct contact, a contact resistance and a wiring resistance are connected in parallel, thereby reducing the contact resistance.
申请公布号 JPH0479368(A) 申请公布日期 1992.03.12
申请号 JP19900195187 申请日期 1990.07.23
申请人 SANYO ELECTRIC CO LTD 发明人 OBA YOSHIYUKI
分类号 H01L27/10;H01L21/8242;H01L27/108;H01L29/417 主分类号 H01L27/10
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