| 摘要 |
<p>PURPOSE:To simply and easily obtain a thin metallic film in which the metal having excellent dimensional accuracy is made to remain by forming a thin org. metallic film on a substrate, and radiating electric charge particle beams thereto to decompose the org. metal. CONSTITUTION:An SiN film 2 of a holding substrate is formed on an Si wafer 1 and the thin org. metallic film 4 is formed thereon by spin-coating the org. metal thereon. The charge particle beams are radiated thereto in a vacuum at the acceleration voltage necessary for the thickness of the thin film 4, and the thin org. metallic film 4 is changed to the thin metallic film 4 down to the boundary with the SiN film 2. The thin org. metallic film 4 in the non- radiated part is then dissolved away by a solvent. The thin metallic film 5 formed with the fine wire pattern of the metal is thereby obtd. The above- mentioned metal is preferably Au or Pt and the charge particles are preferably ions. This method is adequate for a field such as X-ray lithography for forming the fine pattern.</p> |
