| 摘要 |
PURPOSE:To make a defect small, to make a mobility high and to make a resistance low by a method wherein CdS and ZnS are vapor-deposited simultaneously on a light-transmitting substrate to form a semiconductor thin film, the film is exposed to a vapor of CdCl2 at a high temperature, the film is activated and a solid solution is formed. CONSTITUTION:ZnS and CdS:In are vapor-deposited on a glass substrate by using two evaporation sources; a hybrid vapor deposition film of ZnS, CdS and In in a total thickness of 1.1mum is formed in a molar ratio of CdS to ZnS of 8:2. The amount of In is set at and 0.1 to 2mol% against the total of CdS of and ZnS. The hybrid film of ZnS, CdS and In is heat-treated in a saturated vapor of CdCl2; it is changed to a solid solution and is crystallized (activation process); In is added effectively. When it ts changed to the solid solution, an absorption edge wavelength is shifted to the side of a short wavelength. When the film formed by simultaneously vapor-depositing ZnS, CdS and In is activated and heat-treated in the vapor of CdCl2, it is possible to obtain a solid-solution film whose characteristic is excellent. Even when a solid solution of CDS-ZInS having other compositional ratios of CdS to ZnS is used, and even when Al or Ga is used instead of In, the same effect can be obtained. |
