发明名称 MANUFACTURE OF 3-BEAM SEMICONDUCTOR LASER
摘要 PURPOSE:To sufficiently reduce the interval of light irradiating stripes by significantly increasing the exposed surface of second, third contact layers and an upper contact layer, and electrically separating first, second, third and top contact layers by a top current block layer. CONSTITUTION:When wires 20a-20b are bonded onto a second contact layer 16, a top contact layer 19 and a third contact layer 17, the exposed surfaces of the layers 16, 19, 17 are sufficiently increased to sufficiently obtain the bonding regions of the wires 20a-20c. The layers 15, 16, the layers 15, 17 and further the layers 16, 17 and 19 are respectively electrically separated by a top current block layer 18. Thus, the bonding interval of each of the wires 20a-20c can be set to the distance of approx. 100mum, while the intervals of each of the stripes 9a-9c can be reduced to approx. 10mum as compared with the bonding interval of the wires.
申请公布号 JPS63179589(A) 申请公布日期 1988.07.23
申请号 JP19870011672 申请日期 1987.01.20
申请人 SANYO ELECTRIC CO LTD 发明人 KAWASHIMA KENJI;SHONO MASAYUKI
分类号 H01S5/00 主分类号 H01S5/00
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