| 摘要 |
PURPOSE:To prevent a P-N junction from damaging or ohmic characteristics from being deteriorated by interposing a buffer layer for reducing the diffusion of silicon or the deposition of the silicon at the top of an emitter electrode connected to an emitter region on the main surface of a base region, and connecting aluminum wirings thereto. CONSTITUTION:Aluminum wirings 15 are connected through a buffer layer 12 to the top of an emitter electrode 9 on the main surfaces of the collector region C and the base region B of a bipolar transistor. Here, the layer 12 is so constructed as to reduce the amount of silicons of at least in each of the collector region C, the base region B and the emitter electrode 9 in diffusing the silicons to the wirings 15. Thus, it can prevent an alloy spike or a solid epitaxial layer from generating, thereby preventing the damage of a P-N junction or the deterioration of ohmic characteristics caused thereby.
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