| 摘要 |
<p>PURPOSE:To increase the degree of designing freedom of a semiconductor circuit by a method wherein a metal film which is Schottky-bonded to at least one semiconductor chip is formed on the rear of the semiconductor chip out of a plurality of semiconductor chips which are mounted on the conductive face of a die stage. CONSTITUTION:A metal film 5 which is Schottky-bonded to at least one semiconductor chip 3 is formed on the rear of the semiconductor chip out of a plurality of semiconductor chips 2, 3 which are mounted on the conductive face of a die stage 1. As a result, a Schottky barrier diode is formed in a bonding part of the chip 3 to the metal film 5. When a voltage of a desired magnitude which becomes a reverse bias at the diode is applied across the chip 3 and the metal film 5, the rear potential of the chip 3 with reference to the die stage 1 can be set to an arbitrary magnitude and can be made different from the rear potential of the other chip 2. Thereby, it is possible to increase the degree of designing freedom of a semiconductor circuit which is formed on the upper part of the semiconductor chips.</p> |
