| 摘要 |
Bank of photocells mounted in series, characterised in that the photo cells (10, 12, 14, 16) are integrated into insulating wells within the same substrate (8) with the aid of a SOI-type structure (silicon on insulator), known per se, comprising, in a block of silicon, juxtaposed insulating wells made of silica SiO2, the bottoms of which are made up with the aid of a deep insulating layer (2) of SiO2 obtained, for example, by implantation of O+ oxygen ions followed by annealing at high temperature, and the vertical side walls for dielectric insulation (4, 6) of which are obtained by localised thermal oxidation, the photocells being obtained by ion implantation and creation of P and N-type regions in the silicon domains contained in the various wells, and in that the electrical connections (18, 20, 22) between the photocells are produced by etching conductors with the aid of masks on the surface of the substrate. <IMAGE>
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