| 摘要 |
PURPOSE:To eliminate the need for the supply of program voltage by applying supply voltage overlapped to an untie fuse by a capacitive coupling through a capacitor, dielectrically breaking the untie fuse and conductive write. CONSTITUTION:Signals phi1, phi3 are applied to the gates of transistors T1, T3 respectively and the transistors T1 and T3 are turned ON under the state, in which a signal phi0 is applied to the gate electrode of a transistor 8 and the transistor 8 of a memory cell M to be written is turned ON, while a signal phi2 is applied to the gate of a transistor T2 and the transistor T2 is turned OFF. The electrode 5 of a capacitor 10 is biassed at potential V1 and an electrode 9 at ground potential. Voltage V1 is applied to the untie fuse 7 of the memory cell M selected. The levels of each signal phi1, phi3, phi2 are inverted, and the transistors T1 and T3 are turned OFF while the transistor T2 is turned ON. Consequently, voltage pulses V2 are transmitted over the bit-line BL side by a capacitive coupling through the capacitor 10. Accordingly, information can be written even when program voltage Vp is not fed separately from the outside. |
