| 摘要 |
PURPOSE:To form a very fine pattern with desired roughness in atmosphere by passing a current between a probe and a double-layer film composed of an amorphous chalcogenide layer and another layer containing silver and/or copper. CONSTITUTION:An amorphous Ge-Se film 2 is formed on a glass substrate 1 by high-frequency sputtering of a glassy Ge-Se target. A silver compound film 3 is deposited on the Ge-Se film 2 by electroless plating. This structure is placed in a tunneling microscope, in which a fine platinum probe is approached in atmospheric pressure to apply a voltage between the probe and the structure (the probe at positive), and the structure surface is scanned with tunneling current controlled. According to this method, a very finely patterned mark can be printed. The mark may be several tens of nanometers in size and several nanometers in depth. |
