| 摘要 |
PURPOSE:To obtain the exposure optimum to the sizes of a mask pattern and the state of a substrate on the substrate and to form the photoresist pattern faithful to the photomask size by providing >=2 regions having >=3% difference in the transmittance of the part where light is transmitted. CONSTITUTION:The aperture pattern 2 sized 3.0mum square and the aperture pattern 3 sized 4.0mum square are formed by etching a light shielding body 1 consisting of chromium on the quartz plate 4 to be used with, for example, a stepper having 5:1 reduction rate. A layer 5 which consists of a carbon film having 700nm thickness and has 70% transmittance is formed on the aperture pattern 3 sized 4.0mum square. the patters sized 0.6mum square and 0.8mum square are faithfully formed on the substrate by using this photomask. The similar effect is expected even for the patterns if various kinds of patterns by providing >=3% difference in the transmittance by the sizes of the aperture patterns. The mask patterns near the resolution threshold of the exposing device are faithfully transferred to the exposed substrate in this way. |
