| 摘要 |
PURPOSE:To restrain a leakage current between a source and a drain and to lessen a transistor in dimensions by a method wherein a source electrode or a drain electrode is made to extend as a light blocking layer up to a part of the gate electrode of a polycrystalline semiconductor transistor. CONSTITUTION:A source 8 and a drain 2 both of polysilicon high in impurity concentration, channels 9 and 9' of polysilicon low in impurity concentration between the source 8 and the drain 2, an intermediate electrode 30 between the channels 9 and 9', gate electrodes 5 and 5' on the channels 9 and 9', a layer insulating film 4 of silicon oxide formed on a source, a drain, and a gate electrode, a source electrode 7 connected to the source 8 and the drain 2 and extending onto the layer insulating film 4 passing through the hole of the layer insulating film 4, and a drain electrode 3 are formed on a transparent insulating substrate 1 of glass. The source electrode 7 and the drain electrode 3 are formed of light non-transmissive aluminum. A part of the gate electrode 5' is covered with a part 7' of the source electrode 7 located above the layer insulating film 4. |
