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发明名称
FIELD-EFFECT TRANSISTOR, MANUFACTURE THEREOF AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME
摘要
申请公布号
JPH0456139(A)
申请公布日期
1992.02.24
申请号
JP19900163737
申请日期
1990.06.21
申请人
TOSHIBA CORP
发明人
TERADA TOSHIYUKI
分类号
H01L29/812;H01L21/338
主分类号
H01L29/812
代理机构
代理人
主权项
地址
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