| 摘要 |
The programming for memory circuits permits starting an internal self-tutoring of the memory, on application of an operational voltage and attaining an inner stability. According to the determined redundancy structure, an internal programming of redundancy bit decoders (6) or redundancy word coders (7) is carried out. The included associative memory cells (30) in the coders are allocated to bit (2.4), or word lines (2.5). During the redundancy programming, at the self-test start, a reset redundance validity FF (33) is adjusted. The positive end of the self-test releases blocked control inputs and possibly a signal at an output pin (MR). With a faultless memory matrix (2), an irreversible memory element (25) is programmed. ADVANTAGE - No atypical conditions on programming of redundant lines. |
