| 摘要 |
<p>An apparatus for processing semiconductor wafers (16) for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor (90) is provided. The apparatus comprises a chamber, a circular susceptor (90) in the chamber for supporting a semiconductor wafer thereon, heating means (120) beneath the susceptor, and support means (70) for peripherally supporting the susceptor (90) in the chamber comprising 3-6 spokes which are each connected at one end to a central hub (80) which is coaxial with the axis of the circular susceptor (90), but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes (80) peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribtuion of the heat through the susceptor. <IMAGE></p> |
